| PART |
Description |
Maker |
| AS7C33128NTF32_36B AS7C33128NTF36B-80TQIN AS7C3312 |
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 8 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 7.5 ns, PQFP100
Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection 128K X 36 ZBT SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 10 ns, PQFP100
LM194/LM394 Supermatch Pair; Package: TO-99; No of Pins: 6; Qty per Container: 500; Container: Box 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
LM195/LM395 Ultra Reliable Power Transistors; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail
LM392 Low Power Operational Amplifier/Voltage Comparator; Package: SOIC NARROW; No of Pins: 8; Qty per Container: 95; Container: Rail
3.3V 128K × 32/36 Flowthrough Synchronous SRAM with NTDTM
LM3916 Dot/Bar Display Driver; Package: MDIP; No of Pins: 18; Qty per Container: 20; Container: Rail
LM392 Low Power Operational Amplifier/Voltage Comparator; Package: MDIP; No of Pins: 8; Qty per Container: 40; Container: Rail
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| AS7C33512NTF32A |
(AS7C33512NTF32A / AS7C33512NTF36A) 3.3V 512K x 32/36 Flowthrough Synchronous SRAM
|
Alliance Semiconductor Corporation
|
| GS820H32Q-5I GS820H32T-150I GS820H32GT-5I GS820H32 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| M36L0R7060T1 M36L0R7060B1 M36L0R7060B1ZAQE M36L0R7 |
128 Mbit (Multiple Bank, Multilevel, Burst) Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package
|
STMicroelectronics
ST Microelectronics, Inc.
|
| M36L0R7060B1 M36L0R7060B1ZAQE M36L0R7060B1ZAQF M36 |
128 Mbit (Multiple Bank, Multilevel, Burst) Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package
|
Numonyx B.V
|
| M36P0R8070E0 M36P0R8070E0ZACE M36P0R8070E0ZACF |
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package
|
Numonyx B.V
|
| GS88019AT-133 GS88019AT-133I GS88019AT-150I GS8801 |
512K X 18 CACHE SRAM, 3.5 ns, PQFP100
250MHz 512K x 18 9Mb sync burst SRAM
225MHz 512K x 18 9Mb sync burst SRAM
200MHz 512K x 18 9Mb sync burst SRAM
166MHz 512K x 18 9Mb sync burst SRAM
150MHz 512K x 18 9Mb sync burst SRAM
133MHz 512K x 18 9Mb sync burst SRAM
150MHz 256K x 32 9Mb sync burst SRAM
166MHz 256K x 32 9Mb sync burst SRAM
225MHz 256K x 32 9Mb sync burst SRAM
250MHz 256K x 32 9Mb sync burst SRAM
133MHz 256K x 36 9Mb sync burst SRAM
150MHz 256K x 36 9Mb sync burst SRAM
166MHz 256K x 36 9Mb sync burst SRAM
200MHz 256K x 36 9Mb sync burst SRAM
225MHz 256K x 36 9Mb sync burst SRAM
133MHz 256K x 32 9Mb sync burst SRAM
200MHz 256K x 32 9Mb sync burst SRAM
250MHz 256K x 36 9Mb sync burst SRAM
|
GSI Technology
|
| M36L0R8060T1ZAQE M36L0R8060T1ZAQF M36L0R8060T1ZAQT |
256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| GS840FH18AT-10 GS840FH18AT-10I GS840FH18AT-12 GS84 |
10ns 256K x 18 4Mb sync burst SRAM
12ns 256K x 18 4Mb sync burst SRAM
8.5ns 256K x 18 4Mb sync burst SRAM
8ns 256K x 18 4Mb sync burst SRAM
10ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
| M36L0R8060T0 M36L0R8060B0 M36L0R8060 |
256 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 64 Mbit (Burst) PSRAM
256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| CY7C1514KV18 CY7C1514KV18-300BZXC CY7C1512KV18-300 |
72-Mbit QDR II SRAM 2-Word Burst Architecture Two-word burst on all accesses
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 QDR SRAM, 0.45 ns, PBGA165
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| EDI2DL32256V EDI2DL32256V35BC EDI2DL32256V40BC EDI |
TMS320C6202. TMS320C6203. TMS320C6204. TMS320C6 Families
x32 Fast Synchronous SRAM
256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,4.0ns,256Kx32同步流水线脉冲静态RAM)
256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,3.5ns,256Kx32同步流水线脉冲静态RAM)
256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,3.8ns,256Kx32同步流水线脉冲静态RAM)
|
WEDC[White Electronic Designs Corporation]
|
